PART |
Description |
Maker |
PTF102003 |
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
PEAK electronics GmbH
|
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
SKY77456 |
Front-End Module for LTE / EUTRAN Band IV / X (Tx 1710-1770 MHz), (Rx 2110-2170 MHz)
|
Skyworks Solutions Inc.
|
DS52-0002 DS52-0002-TR DS52-0002-RTR |
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆 1920-2170 MHz, Low cost two-way SMT power divider
|
Bel Fuse, Inc. MACOM[Tyco Electronics] MA-Com
|
MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
535CBBHASFREQ 535AAAHBSFREQ 535AAASASFREQ 535DCCSA |
TCVCXO, CLOCK, 10 MHz - 120 MHz, HCMOS OUTPUT TCVCXO, SINE OUTPUT, 10 MHz - 120 MHz
|
CTS CORP
|
MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|